To even more increase its SiC technology, Infineon invested a whole lot into testing on-state oxide reliability of electrically screened SiC MOSFETs as well as the off state oxide stress as a result of electric field situations in SiC power devices. Identification of stacking faults in silicon carbide by polarization-settled https://www.facebook.com/permalink.php?story_fbid=pfbid0S5kCy9ofdZHP48BK1Hrvo6Pt3k19B6C3UiKxBuAVPiWNcFzDay1yYF1cQ8EJW8J3l&id=61562415773754&__cft__[0]=AZXd1QS2rNIw0qnZk5SlTD4NeGL6ozkZ05OUFZf974x4uy-c_LkoZRNsxLRo7BHhrLw_dUFCvDc9tZE7JkMCRnFLitbS8BucwCZAdgnNsH-HGQu7qS7ch0ZnGuroOqn885RVgQCxYP2ooevu9vI6rYzIlxcWvi0RjlGnvsd5xQe5gYhl70YA4cgtMcB5F_JhGJm0Oxe2VCB19HHzcdQXo-Ky&__tn__=%2CO%2CP-R